Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

ABSTRACT

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g., &lt;550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation under 35 USC 120 of U.S. patentapplication Ser. No. 14/333,536, filed Jul. 17, 2014, which is acontinuation under 35 USC 120 of U.S. patent application Ser. No.12/862,739, filed Aug. 24, 2010, issued as U.S. Pat. No. 8,802,882 onAug. 12, 2014, which is a continuation under 35 USC 120 of U.S. patentapplication Ser. No. 12/578,262, filed on Oct. 13, 2009, issued as U.S.Pat. No. 7,781,605 on Aug. 24, 2010, which is a continuation under 35USC 120 of U.S. patent application Ser. No. 10/870,106 entitled“Composition and Method for Low Temperature Chemical Vapor Deposition ofthe Silicon-Containing Films Including Silicon Carbonitride and SiliconOxycarbonitride Films,” filed on Jun. 17, 2004 in the names of ZiyunWang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen andThomas H. Baum, issued Oct. 13, 2009 as U.S. Pat. No. 7,601,860, whichin turn is a continuation-in-part under 35 USC 120 of U.S. patentapplication Ser. No. 10/683,501 entitled “Monosilane or DisilaneDerivatives and Method for Low Temperature Deposition ofSilicon-Containing Films Using the Same,” filed on Oct. 10, 2003 in thenames of Ziyun Wang, Chongying Xu and Thomas H. Baum, and issued Aug.25, 2009 as U.S. Pat. No. 7,579,496. The disclosures of each of thesepatent applications are hereby incorporated herein by reference in theirrespective entireties, for all purposes.

FIELD OF THE INVENTION

The present invention relates generally to novel silicon-containingprecursors and the formation of silicon-containing films using saidprecursors in the manufacture of semiconductor devices. Morespecifically, the present invention relates to silicon-containingprecursors and methods for forming silicon-containing films, e.g., filmsincluding silicon carbonitride and silicon oxycarbonitride, on asubstrate using low temperature (T<550° C.) chemical vapor deposition(CVD) processes.

DESCRIPTION OF THE RELATED ART

In semiconductor manufacturing, thin (e.g., <1,000 nanometers thickness)passive layers of chemically inert dielectric materials, such as siliconnitride (Si₃N₄), siliconoxynitride (SiO_(x)N_(y)) and/or silicon dioxide(SiO₂), are widely employed in microelectronic device structures, tofunction as structural elements of the multi-layered structure, such assidewall spacer elements, diffusion masks, oxidation barriers, trenchisolation coatings, inter-metallic dielectric materials, passivationlayers and etch-stop layers.

Recently studies have shown that carbon incorporation (10-15%) insilicon nitride films is beneficial to film quality for transistorsidewall spacer applications. Etch stop and capping layers situatedbetween low dielectric constant (low-k) layers also benefit from amixture of carbon with silicon nitride or silicon oxide. In addition,pre-metal dielectric (PMD)-liners of silicon nitride require etchselectivity and diffusion barrier properties, which can be enhanced bycarbon incorporation into the silicon nitride.

Silicon carbonitride (Si—C—N), which displays the properties of siliconnitride and silicon carbide, is both temperature and oxidationresistant. As such, Si—C—N material is being investigated for use as ahard mask, etch stop or a passivation layer for the Cu dual damasceneprocess.

Si—C—N layers are generally grown using various plasma-enhanced chemicaldeposition techniques (PECVD).

Deposition of silicon-containing films by CVD techniques is a highlyattractive methodology for forming such Si—C—N films. Towards that end,mixtures of monosilane, hydrocarbons, and ammonia or nitrogen havegenerally been used to synthesize Si—C—N films using CVD at elevatedtemperatures (T˜1300 K). For example, crystalline thin films of Si—C—Nhave been grown by microwave plasma enhanced CVD (PECVD) at temperaturesabove 800° C. using a mixture of H₂, CH₄, N₂ and SiH₄ gases. However,these mixtures tend to be explosive and flammable. (see, Chen, L. C., etal., Applied Physics Letters, 72, 2463-2465 (1998)). More recently,Si—C—N films have been deposited using PECVD at 350° C. to 400° C. usinga mixture of trimethylsilane (3MS), helium and ammonia (see, Foresight,April 2003, publication of Applied Materials Taiwan). This discloseddeposition requires high plasma densities that can damage devicestructures if used in the “front end,” e.g., the PMD-liner.

To be compatible with the next generation IC device manufacturing,sidewall spacers need to be deposited by thermal CVD processes at lowdeposition temperatures, e.g., temperatures less than about 550° C.,preferably about 530° C. Because of stringent conformality requirementsand proximity to the transistor channel, the use of plasmas is notpermitted. Presently used precursors, such as BTBAS, require very highprecursor flow rates and have extremely low deposition rates at thesetemperatures, leading to very high processing costs. Thus, there is asignificant need for suitable precursor compositions for such thermaldeposition processes. Of particular interest are volatile organosiliconprecursors containing appropriate ratios of silicon, nitrogen andcarbon.

In addition, to be compatible with the next generation IC devicemanufacturing, PMD-liners need to be deposited at temperatures less thanabout 450° C., preferably about 400° C. For this application, low energydensity plasmas would be acceptable. Further, etch stop and cappinglayers to be integrated with low k dielectrics and copper wiring need tobe deposited at temperatures below about 400° C., preferably below about350° C. These layers need to have high structural integrity, goodbarrier properties with respect to copper diffusion, and a dielectricconstant significantly less than that of silicon nitride. For etch stopand capping layers application, PECVD is also acceptable. Again,volatile organosilicon precursors containing appropriate ratios ofsilicon, nitrogen and carbon are preferable.

Previously, we demonstrated that disilane precursors can offer highdeposition rates at low temperatures. For example, silicon nitride filmsmay be deposited at a rate of 26 Å/min by CVD at 450° C. using a mixtureof hexaethylamidodisilane (HEADS) precursor and ammonia. Without beingbound by theory, the high growth rate is attributed to the weaksilicon-silicon bond in the disilane compound, which has a bond energyof 222 kJ/mol. In addition, it has been reported that highertemperatures induce lower deposition rates at the substrate because thereactant desorbs from the surface with the increase in temperature.Notably, disilane (Si₂H₆) and hexachlorodisilane (HCDS) (Si₂Cl₆), whichhave the weak Si-Si bond, also have been considered as promisingprecursors, however, they provide no source of carbon atoms. Further,chlorine may be incorporated into the fabricated chips, which couldsignificantly reduce the chips long-term performance.

The art therefore has a continuing need for improved organosiliconprecursors for forming silicon-containing films, such as low ksilicon-containing thin films including silicon oxynitride, siliconnitride, silicon carbonitride and silicon oxycarbonitride.

SUMMARY OF THE INVENTION

The present invention relates generally to the formation ofsilicon-containing films in the manufacture of semiconductor devices,and more specifically to novel silicon precursors and methods forforming silicon-containing films, such as silicon-containing low k filmsand films comprising silicon carbonitride (Si—C—N), and siliconoxycarbonitride (Si—O—C—N), on a substrate using low temperature (T<550°C.) CVD processes.

The present invention in one aspect relates to a silicon compoundselected from the group consisting of:

(A) compounds of the formula:(R²R³N)_(3-x)R¹ _(x)Si—SiR¹ _(x)(NR²R³)_(3-x)

wherein:

R¹, R², and R³ may be the same as or different from one another and eachis independently selected from the group consisting of H, C₁-C₅ alkyl,C₃-C₆ cycloalkyl, aryl, arylalkyl; and

x is 1 or 2);

(B) compounds of the formula:

wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₅alkyl, C₃-C₆ cycloalkyl, aryl and arylalkyl; and

X, Y, and Z may be the same as or different from the other and each isindependently selected from the group consisting of H, alkyl,alkylamino, dialkylamino and alkylhydrazido;

with the proviso that when R¹, R², X and Y are methyl groups and R³ ishydrogen, Z cannot be hydrogen; and

(C) compounds of the formula:

wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₅alkyl, C₃-C₆ cycloalkyl, aryl and arylalkyl; and

X¹, X², Y′, Y², Z¹ and Z² may be the same as or different from the otherand each is independently selected from the group consisting of H,alkyl, alkylamino, dialkylamino and alkylhydrazido.

Another aspect of the present invention relates to a method of forming asilicon-containing film on a substrate, comprising contacting asubstrate under chemical vapor deposition conditions, at a temperaturebelow 600° C., with a vapor of a silicon compound selected from thegroup consisting of:

(A) compounds of the formula:(R²R³N)_(3-x)R¹ _(x)Si—SiR¹ _(x)(NR²R³)_(3-x)

wherein:

R¹, R², and R³ may be the same as or different from one another and eachis independently selected from the group consisting of H, C₁-C₅ alkyl,C₃-C₆ cycloalkyl, aryl, arylalkyl; and

x is 1 or 2;

(B) compounds of the formula:

wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₅alkyl, C₃-C₆ cycloalkyl, aryl and arylalkyl; and

X, Y, and Z may be the same as or different from the other and each isindependently selected from the group consisting of H, alkyl,alkylamino, dialkylamino and alkylhydrazido;

with the proviso that when R¹, R², X and Y are methyl groups and R³ ishydrogen, Z cannot be hydrogen;

(C) compounds of the formula:

wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₅alkyl, C₃-C₆ cycloalkyl, aryl and arylalkyl; and

X¹, X², Y¹, Y², Z¹ and Z² may be the same as or different from the otherand each is independently selected from the group consisting of H,alkyl, alkylamino, dialkylamino and alkylhydrazido; and

(D) compounds of the formula:(R¹R²N)₂Si:,   (i)(R¹R²N)₂Si═Si(NR¹R²)₂, and   (ii)(R¹R²N)₂HSi—SiR³ _(n)H_(3-n),   (iii)

wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₄alkyl, amino, silyl groups (—SiH₃) and hydrocarbyl derivatives of silylgroups (e.g., —SiR₃); and

0≦n≦3.

Yet another aspect of the present invention relates to a method ofmaking a silicon compound of the formula(R²R³N)_(3-x)R¹ _(x)Si—SiR¹ _(x)(NR²R³)_(3-x)

wherein:

R¹, R², and R³ may be the same as or different from one another and eachis independently selected from the group consisting of H, C₁-C₅ alkyl,C₃-C₆ cycloalkyl, aryl, arylalkyl; and

x is 1 or 2;

said method comprising reacting a disilane compound of the formulaXR¹R²Si—SiXR¹R² with a secondary amine (R²R³NH) and a tertiary amine(R¹R²R³N) compound, wherein X is selected from the group consisting ofbromine, fluorine and chlorine, and R¹, R² and R³ are as set out above,according to the following reaction:XR¹R²Si—SiXR¹R²+R²R³NH+R¹R²R³N→(R2R3N)_(3-x)R¹ _(x)Si—SiR¹_(x)(NR2R3)_(3-x)

Other aspects, features and embodiments of the invention will be morefully apparent from the ensuing disclosure and appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an STA plot for Me₂(NEt₂)Si—Si(NEt₂)Me₂ in Ar.

FIG. 2 is an STA plot for Me₄Si₂(NHNMe₂)₂ in Ar.

DETAILED DESCRIPTION OF THE INVENTION AND PREFERRED EMBODIMENTS THEREOF

The present invention relates to novel silicon precursors for the CVDformation of silicon carbonitride and/or silicon oxycarbonitride filmson substrates at low temperatures, and to corresponding processes forforming such films with such precursors.

In one aspect, the invention provides a compound of the formula:(R²R³N)_(3-x)R¹ _(x)Si—SiR¹ _(x)(NR²R³)_(3-x)   (1)wherein:R¹, R², and R³ may be the same as or different from one another and eachis independently selected from the group consisting of H, C₁-C₅ alkyl,C₃-C₆ cycloalkyl, aryl, arylalkyl; andx is 1 or 2.

The compounds of formula (1) are usefully employed for formingsilicon-containing films by chemical vapor deposition, utilizing processconditions including a deposition temperature of less than 600° C., morepreferably less than 550° C., and appertaining pressures,concentrations, flow rates and CVD techniques, as readily determinablewithin the skill of the art for a given application, based on thedisclosure herein.

“Silicon-containing films” are defined herein means silicon nitride,silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, low-kthin silicon-containing films, high-k gate silicate films and lowtemperature silicon epitaxial films.

Preferred compounds of formula (1) include Me₂(NEt₂)Si—Si(NEt₂)Me₂,Me₂(NEtMe)Si—Si(NEtMe)Me₂, and Me₂(NMe₂)Si—Si(NMe₂)Me₂.

Compounds of formula (1) are readily synthesized by reaction of disilanecompounds of the formula R¹ ₂XSi—SiXR¹ ₂ with a secondary amine (R²R³NH)and a tertiary amine (R¹R²R³N) compound, wherein X is selected from thegroup consisting of bromine, fluorine and chlorine, and R¹, R² and R³are as set out above. For example, Me₂(NEt₂)Si—Si(NEt₂)Me₂ can beprepared according to the following reaction:Me₄Si₂Cl₂+2NEt₃+2HNEt₂→Me₄Si₂(NEt₂)₂+2NEt₃.HClas hereinafter more fully described in the examples herein.

The invention in another aspect relates to a group of halogen-freesilanes or disilane derivatives that are substituted with at least onealkylhydrazine functional group and can be used as CVD precursors fordeposition of silicon-containing thin films.

The silane derivatives of the present invention can be represented bythe general formula:

wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₅alkyl, C₃-C₆ cycloalkyl, aryl and arylalkyl; and X, Y, and Z may be thesame as or different from the other and each is independently selectedfrom the group consisting of H, alkyl, alkylamino, dialkylamino andalkylhydrazido (e.g., R¹R²NNH—, wherein R¹ and R² are the same asdescribed hereinabove);with the proviso that when R¹, R², X and Y are methyl groups and R³ ishydrogen, Z cannot be hydrogen.

The silane derivatives of the present invention can also be representedby the general formula:

wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₅alkyl, C₃-C₆ cycloalkyl, aryl and arylalkyl; andX¹, X², Y¹, Y², Z¹ and Z² may be the same as or different from the otherand each is independently selected from the group consisting of H,alkyl, alkylamino, dialkylamino and alkylhydrazido.

Preferably, the disilane derivative compounds of the present inventionare characterized by functional groups that are symmetricallydistributed in relation to the Si—Si bond.

Compounds of formula (2) and (3) are readily synthesized by reaction ofdisilane compounds of the formula R¹ ₂XSi—SiXR¹ ₂ with an amine(R¹R²R³N) compound and a hydrazine compound (H₂NNR¹ ₂), wherein X isselected from the group consisting of bromine, fluorine and chlorine,and R¹, R² and R³ are as set out above. For example,Me₂(Me₂NNH)Si—Si(NHNMe₂)Me₂ can be prepared according to the followingreaction:Me₄Si₂Cl₂+2NEt₃+2H₂NNMe₂→Me₄Si₂(NHNMe₂)₂+2NEt₃.HClas hereinafter more fully described in the examples herein.

The compounds of formulas (2) and (3) are usefully employed for formingsilicon-containing films by chemical vapor deposition, utilizing processconditions including a deposition temperature of less than 600° C., morepreferably less than 550° C., and appertaining pressures,concentrations, flow rates and CVD techniques, as readily determinablewithin the skill of the art for a given application, based on thedisclosure herein.

Another class of silicon-containing precursors in accordance with theinvention, which are amenable to CVD processes at low temperatures, suchas in the range of from about 350° C. to about 550° C., for pre- andpost-metal deposition of thin (e.g., 500 Angstroms to 1 micrometerthickness) dielectric films of silicon nitride or silicon oxynitride insemiconductor manufacturing, or otherwise for forming silicon nitride orsilicon oxynitride ceramic thin films on different substrates, includethe diaminosilylenes of formula (4) and their derivatives thereof,represented by formulae (5) and (6):(R¹R²N)₂Si:   (4)(R¹R²N)₂Si═Si(NR¹R²)₂   (5)(R¹R²N)₂HSi—SiR³ _(n)H_(3-n)   (6)wherein R¹, R² and R³ may be the same as or different from the other andeach is independently selected from the group consisting of H, C₁-C₄alkyl, amino, silyl groups (—SiH₃) and hydrocarbyl derivatives of silylgroups (e.g., —SiR₃); and0≦n≦3.

Diamino-silylenes as represented by formula (4) are diradical species,some of which are not stable and easily form the derivatives asrepresented in formulae (5) and (6), while others are remarkably stableand can be readily delivered in their diradical form.

An exemplary stable silylene compound includes the followingdiaminosilylene:

This diaminosilylene remains unchanged after boiling in toluene at 150°C. for four months. Thermal decomposition takes place at 220° C. Thestability of this diaminosilylene is thought to result in part fromaromatic stabilization (see, Denk, M., et al., J. Am. Chem. Soc., 116,2691-2692 (1994).

Diaminosilylenes represented by formula (4) can be synthesized accordingto the following mechanism (see, West, R., Denk, M., Pure Appl. Chem.,68, 785-788 (1996)):

The compounds of formulae (5) and (6) can be made in accordance with thereaction scheme shown below:

In accordance with teaching herein, the type of dielectric film producedby the corresponding CVD process can be tailored by choice of thespecific silicon-containing precursor of formulae (1)-(6). For example,ammonia, oxygen or nitric oxide may be used as alternative singlereactants to form the respective silicon nitride, silicon oxynitride,silicon carbonitride and/or silicon oxycarbonitride single componentfilms, or a mixture of two or more of such reactants can be employed inthe CVD process with selected one(s) of the formulae (1)-(6) precursorsto form corresponding multicomponent films, or graded composition films.Alternatively, mono-, di- and trialkyl amines, of the formula R¹R²R³Nmay be employed as reactants, wherein R¹, R² and R³ may be the same asor different from the other and each is independently selected from thegroup consisting of H, and C₁-C₄ alkyl groups. In addition, inertcarrier gases may be present in the precursor gas, including helium,argon and nitrogen.

In application, the silicon-containing precursor is reacted with adesired co-reactant in any suitable manner, e.g., in a single wafer CVDchamber, or in a furnace containing multiple wafers, utilizing processconditions including a deposition temperature of less than 600° C., morepreferably less than <550° C., and appertaining pressures,concentrations, flow rates and CVD techniques, as readily determinablewithin the skill of the art for a given application, based on thedisclosure herein. For example, when depositing sidewall spacers, PMDliners, or etch-stop and capping layers, temperatures of less than 550°C., less than 450° C., and less than 400° C., respectively, should beused. With respect to pressure, deposition pressures may range fromabout 1 Ton to about 80 Torr.

The features and advantages of the invention are more fully shown by thefollowing illustrative and non-limiting examples.

EXAMPLE 1 Synthesis of Me₂(NEt₂)Si—Si(NEt₂)Me₂

In a 1 L flask, 300 mL of hexanes and 350 mL (1.6 M, 560 mmol) ofn-butyllithium in hexanes were mixed. To this solution, 41 g of HNEt₂(560 mmol) was added at 0° C. White precipitate material was observedimmediately. Upon completion of the addition, the reaction flask wasallowed to warm to room temperature and stirred for an additional hour.Then, 50 g of Me₄Si₂Cl₂ (270 mmol) in 100 mL of diethyl ether was slowlyadded to the flask at room temperature. The mixture was stirredovernight and filtered at room temperature. The crude product, 59 g (227mmol) 85% yield) was obtained after removal of the volatiles from thefiltrate. The pure product was obtained by vacuum distillation (b.p.˜62° C. at 190 mTorr). ¹H NMR (C₆D₆): 0.26 (s, 12 H, —CH₃Si); 1.00 (t,12 H, —CH₃CH₂N); 2.83 (q, 8H, —CH₃CH₂N). ¹³C {¹H} NMR (C₆D₆): δ0.33(—CH₃Si); 16.2 (—NCH₂CH₃); 41.3 (—NCH₂CH₃). Mass spectrum: m/z 260 [M+];188 [M+-(—NEt₂)]; 130 [M+-(—SiMe₂(NEt₂)]. C₁₂H₃₂N₂Si₂: Found (theory),C: 54.98% (55.31%), H: 12.41% (12.38%), N: 10.66% (10.75%).

FIG. 1 shows that the STA data indicates that the T₅₀ value ofMe₂(NEt₂)Si—Si(NEt₂)Me₂ is about 160° C., evidencing good volatility andtransport properties for chemical vapor deposition.

EXAMPLE 2 Synthesis of Me₂(Me₂NNH)Si—Si(NHNMe₂)Me₂

A 3 L flask was filled with a solution comprising 2.5 L of hexanes, 50grams (267 mmol) of Me₄Si₂Cl₂, and 57 grams (561 mmol) of anhydrousNEt₃. 34 grams of H₂NNMe₂ (561 mmol), dissolved in 100 mL of diethylether, was slowly added to the flask at room temperature. Whiteprecipitate was observed during the addition of H₂NNMe₂ to the solution.Following completion of the addition, the mixture was stirred overnight,filtered, and all volatile materials were removed from the filtrateunder vacuum. The crude yield was 86% (54 g, 230 mmol). Vacuumdistillation was used to purify the end product, which has a boilingpoint of approximately 45° C. at 35 mTorr. ¹H NMR (C₆D₆): δ0.33 (s, 12H,—CH₃Si), 1.90 (br, 2H, —HN), 2.27 (s, 12H, —CH₃N). ¹³C{¹H} NMR (C₆D₆):δ-0.68 (—SiCH₃), 52.6 (—NCH₃). Mass spectrum: m/z 175 [M⁺-(—HNNMe₂)],132 [M⁺-(—HNNMe₂)-(—NMe₂)], 116 [M⁺-(—SiMe₂(HNNMe₂)]. C₈H₂₆N₄Si₂: Found(calculated) C: 40.81% (40.98%), H: 10.99% (11.18%), and N: 23.67%(23.89%).

FIG. 2 shows the STA plot for Me₄Si₂(NHNMe₂)₂, which is a liquid at roomtemperature and can be transported in its vapor form completely withvery little (<1%) residual material at about 350° C. The thermalstability of Me₄Si₂(HNNMe₂)₂ in solution at 100° C. was monitored byproton NMR study for 7 days, and no significant decomposition wasdetected.

EXAMPLE 3 Silicon Carbonitride Deposition from Me₄Si₂(NHNMe₂)₂

A solution of the compound of Example 2, Me₄Si₂(NHNMe₂)₂, was preparedat a concentration of 0.40M in a hydrocarbon solvent. This solution wasmetered at 0.10 mL per minute (equivalent to about 2 sccm) with 10 sccmof He as a carrier gas and vaporized at 70° C. The vapor was mixed with10 sccm of NH₃ in a showerhead device that was maintained at 100° C. andthereby dispersed over the surface of a Si(100) wafer heated to 550° C.The chamber pressure was maintained at 1 Torr during deposition. Thefilm was deposited at a rate of 1.3 nm/minute.

Hydrocarbon solvents contemplated herein for use as precursor solventsinclude, but are not limited to, alkanes, alkenes, alkynes,cycloalkanes, aromatic compounds such as benzene and its derivativesthereof, alkanols and amines.

Chemical analysis of the film, using a combination of RBS (RutherfordBackscattering), HFS (Hydrogen Forward Scattering), and NRA (NuclearReaction Analysis) techniques, revealed that the film composition was22.9% Si, 13.2% N, 33.1% C, 25.0% H and the index of refraction at 632nm was 1.98.

While the invention has been described herein with reference to variousspecific embodiments, it will be appreciated that the invention is notthus limited, and extends to and encompasses various other modificationsand embodiments, as will be appreciated by those ordinarily skilled inthe art. Accordingly, the invention is intended to be broadly construedand interpreted, in accordance with the ensuing claims.

What is claimed is:
 1. A silicon compound of the formula:(R¹R²N)₂HSi—SiR³ _(n)H_(3-n) wherein R¹, R² and R³ may be the same as ordifferent from each other and each is independently selected from thegroup consisting of H, C₁-C₄ alkyl, amino, silyl groups (-SiH₃) andhydrocarbyl derivatives of silyl groups; and 0≦n≦3.
 2. The siliconcompound of claim 1, wherein R¹, R² and R³ may be the same as ordifferent from each other and each is independently a hydrocarbylderivative of a silyl group.
 3. The silicon compound of claim 1, whereinR¹, R² and R³ are the same.
 4. The silicon compound of claim 3, whereinR¹, R² and R³ are selected from C₁-C₄ alkyl.
 5. The silicon compound ofclaim 1, wherein R¹, R² and R³ may be the same as or different from eachother and each is independently selected from the group consisting of Hand C₁-C₄ alkyl.
 6. The silicon compound of claim 1, wherein R¹, R² orR³ is a silyl group.
 7. The silicon compound of claim 1, wherein R¹, R²and R³ may be the same as or different from each other and each isindependently a silyl group or a hydrocarbyl derivative of a silylgroup.
 8. A composition comprising a silicon compound of the formula:(R¹R²N)₂HSi—SiR³ _(n)H_(3-n) wherein R¹, R² and R³ may be the same as ordifferent from each other and each is independently selected from thegroup consisting of H, C₁-C₄ alkyl, amino, silyl groups (-SiH₃) andhydrocarbyl derivatives of silyl groups; and 0≦n≦3, and wherein saidsilicon compound is in a vapor form.
 9. The composition of claim 8,further comprising an inert carrier gas.
 10. The composition of claim 9,wherein said inert carrier gas is selected from among helium, argon andnitrogen.
 11. The composition of claim 8, further comprising aco-reactant.
 12. The composition of claim 11, wherein the co-reactant isselected from among ammonia, oxygen, nitric oxide, monoalkylamines,dialkylamines, and trialkyl amines, and mixtures of two or more thereof.13. The composition of claim 8, further comprising a solvent.
 14. Thecomposition of claim 13, wherein the solvent comprises a hydrocarbonsolvent.
 15. The composition of claim 14, wherein the hydrocarbonsolvent comprises a solvent selected from the group consisting ofalkanes, alkenes, alkynes, cycloalkanes, aromatic compounds, benzene,benzene derivatives, alkanols and amines.
 16. A method of forming asilicon-containing film on a substrate, comprising contacting asubstrate under chemical vapor deposition conditions, at a temperaturebelow 600° C., with a vapor of a silicon compound of the formula:(R¹R²N)₂HSi—SiR³ _(n)H_(3-n) wherein R¹, R² and R³ may be the same as ordifferent from each other and each is independently selected from thegroup consisting of H, C₁-C₄ alkyl, amino, silyl groups (-SiH₃) andhydrocarbyl derivatives of silyl groups; and 0≦n≦3.
 17. The method ofclaim 16, wherein R¹, R² and R³ are selected from the group consistingof C₁-C₄ alkyl.
 18. The method of claim 16, wherein the temperature isbelow 550° C.
 19. The method of claim 16, wherein the vapor furthercomprises a co-reactant.
 20. The method of claim 19, wherein theco-reactant is selected from among ammonia, oxygen, nitric oxide,monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of twoor more thereof.